| PART |
Description |
Maker |
| 2SC311207 2SC3112 2SC3112-B |
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| 2SC3666 |
NPN EPITAXIAL TYPE (AUDIO POWER APLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4210 E000916 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC537607 2SC5376 |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2705Y 2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92VAR
|
TOSHIBA
|
| 2SC4207 E000914 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3381 E000839 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS) npn型外延型（低噪声音频放大器应用推荐用于级联，电流镜电路学前，主功放的第一阶段
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS)
|
Toshiba Semiconductor
|
| 2SC4944 2SC494407 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
Toshiba Semiconductor
|
| 2SC5052 E001019 |
NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
